The low voltage characteristics of N-channel MOSFETs meet the performance demands of applications requiring high current carrying capabilities. With the innovative OptiMOS™ and StrongIRFET™ low and medium voltage power MOSFETs, as well as the revolutionary CoolMOS™ superjunction MOSFET families, Infineon is setting new standards in the industry. Infineon’s N-channel power MOSFET product portfolio is available in a wide range of space-saving packages.
The joint portfolio of OptiMOS™ and StrongIRFET™ N-channel power MOSFETs gives designers the widest choice of voltage ratings, extending from 12 V MOSFETs all the way up to 250 V and 300 V MOSFETs. To learn more about the Infineon’s innovative N-channel power MOSFET solutions, discover the complete portfolio of products now! N-channel power MOSFET offerings Infineon’s 600 V, 650 V, and 800 V N-channel power MOSFETs are making automotive applications more compact and higher performing. The CoolMOS™ N-Channel MOSFET product range targets a broad range of applications from low power to higher power levels. Furthermore, the automotive qualified superjunction (SJ) MOSFETs offer the highest reliability in the field and are compliant with automotive lifetime requirements. Both product families meet the highest quality and performance demands. StrongIRFET™ and StrongIRFET™ 2 N-channel power MOSFETs add robust design and excellent price/performance to the best-in-class technology of OptiMOS™ MOSFETs. Now complemented by StrongIRFET™ and StrongIRFET™ 2 N-channel MOSFETs, this extended portfolio creates a truly compelling combination. Designed for high-performance applications and optimized for high switching frequencies, OptiMOS™ products offer the industry's best figure of merit. Infineon's OptiMOS™ N-channel power MOSFETs were developed to increase efficiency, power density, and cost-effectiveness. For this reason, using MOSFET transistor N-channels for high current applications is often the preferred choice. Because of the specific characteristics of N-channel MOSFETs, the mobility of the carriers is approximately two to three times higher than that of a P-channel for the same R DS(on) value, and the P-channel chip must be two to three times the size of the N-channel. This allows electrons to move quickly and easily through the current when the MOSFET is activated and switched on. An N-channel MOSFET uses electrons to create a current channel.
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